Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET
نویسندگان
چکیده
منابع مشابه
Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET
Capacitance between terminals of a power semiconductor device substantially affects on its switching operation. This paper presents a capacitance–voltage (C–V) characterization system for measuring high voltage SiC–JFET and the results. The C–V characterization system enables one to impose high drain-source voltage to the device and extracts the capacitance between two of three terminals in FET...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2007
ISSN: 1349-2543
DOI: 10.1587/elex.4.517